analysis and improvement of off-state current in biaxially strained si nano p-mosfet by virtual substrate’s doping control

in biaxially strained p-mosfet with si channel, formation of a parasitic parallel channel due to misalignment of energy bands degrades device performance by increasing off-state current. in this paper a new approach has been introduced to eliminate this parasitic channel by increasing the dopant concentration of virtual substrate up to . using simulation the impact of this method on the parasitic channel has been investigated. according to simulation results, increasing virtual substrate's doping not only provides a high mobility channel but also significantly reduces off-state current more than four orders of magnitude. this method is effective in various channel length and also increases output resistance of the mosfet.